Cell Types Data
Searching the Database
With the initial launch of the Allen Cell Types Database, we include electrophysiological recordings from 248 individual cells, a sub-set of which also include [morphological] reconstruction and [#Neuronal Models]. There are several methods to search this database; 1. enable specific [filter parameters] by selecting from the "Filters" menu, 2) Select a cell from the "Cell Location" map, or by selecting from one of the curated search terms. By
only a sub-set of these cells are listed; however, you can alter the sub-set of cells represented by clicking on the "More Options+" link and selecting from categories that include "Dendrite Type", "Morphology", "Models" and "Apical Dendrite".
To filter the neurons in your list of results select from the [mouse line], the cortical [layer], and the hemisphere (left, right or either). You can
the results by the electrophysiological or morphological [features].
Whole cell current clamp recordings were made from cells expressing the fluorescent molecule, tdTomato. Fluorescent cells were cre-positive cells from one of the transgenic lines described below.
Rorb-IRES2-Cre-Strong expression in the zonal layer of the superior colliculus and subregions of thalamus. Dense, patchy expression in layer 4 and sparse expression in layer 5 and 6 in cortex. Also expressed in trigeminal nucleus and small patches of cells in cerebellum. View transgenic characterization.
Scnn1a-Tg2-Cre-Reporter expression in sparse and/or restricted regions of cortex (layer 4), thalamus, midbrain, medulla, pons, and cerebellum. View transgenic characterization.
Scnn1a-Tg3-Cre-Enriched in cortical layer 4 and in restricted populations within cortex, thalamus, and in cerebellum. View transgenic characterization.
Nr5a1-Cre-Expressed in restricted populations within the hypothalamus (ventromedial hypothalamus), and in cortical layer 4. View transgenic characterization.
Rbp4-Cre_KL100-Enriched in cortical layer 5 and the dentate gyrus. View transgenic characterization.
Ntsr1-Cre-Specific to cortical layer 6 neurons. View transgenic characterization.
Sst-IRES-Cre-Strong scattered expression throughout the brain. Localized areas of enrichment include restricted populations in thalamus, amygdala, midbrain, hindbrain, cortical subplate, and Purkinje cell layer. View transgenic characterization.
Pvalb-IRES-Cre-Expressed in restricted and/or sparse populations within the cerebellum, medulla, pons, midbrain, cortex, hippocampus, thalamus, and striatum. View transgenic characterization.
Htr3a-Cre_NO152-Reporter expression is detected in a subset of cortical interneurons. Enrichment is also detected in restricted populations within olfactory areas, pallidum, hypothalamus, pons, medulla, and cerebellum. View transgenic characterization.
Gad2-IRES-Cre-Specific to GABAergic neurons. Enriched in the striatum, piriform cortex, and within restricted populations in the thalamus, hypothalamus, cerebellum, olfactory areas, and GABAergic interneurons of the cortex. View transgenic characterization.
Search results can be filtered by cortical layer by selecting one or more layers from the drop-down menu.
Parallel Coordinate Plot of the Cell Features
Cell Feature Filters
While many distinct electrophysiological features were recorded and/or calculated from each cell, only a few features were called out in the web application. To see the other features, please read the Electrophysiology whitepaper in the "Documentation" tab and/or download the data from the Allen SDK.
When you have selected the "
" Mode, six features are illustrated in the [#Parallel Coordinate Plot]: Upstroke/Downstroke Ratio, Fast AP Trough, FI Curve Slope, Rheobase, Ramp AP Time and Resting Vm. When the "
Electrophysiology + Morphology
" Mode is selected, again only six features are shown: four electrophysiology features; Upstroke/Downstroke Ratio, FI Curve Slope, Rheobase and Resting Vm, as well as two Morphology features: Max Distance and # Stems.
The ratio between the absolute values of the action potential peak upstroke and the action potential peak downstroke. Action potential peak upstroke: The maximum rate of change between the action potential threshold and the action potential peak. Action potential peak downstroke: The minimum rate of change between the action potential peak and the action potential trough.
This value gives us an indication of the amount of time a cell takes to recover after an Action Potential. An example of the difference between a high and a low ratio is demonstrated here.
Fast AP Trough
Minimum value of the membrane potential in the interval lasting 5 ms after the peak of the initial action potential. Notice in the example above of a High vs. Low ratio, the Fast AP Trough values are related.
This value gives us an indication of the kinds of Potassium ion channels that are present in a cell and can be an indication of how fast the neuron can recover after an action potential. This value, while similar to the Upstroke/Downstroke Ratio, seems to be the best parameter to differentiate inhibitory cell-types in an unbiased clustering analysis.
FI Curve Slope
While some of the features we have represented in the application probe the firing patterns of single action potentials, we also calculated features based on multiple sweeps of the cell. The F/I Curve Slope is the slope calculated in the dynamic range of the frequency of action potential firing as a function of the current injected into the cell (in pA). See C. in the figure below. This value indicates the excitability and the firing pattern of a cell.
This value is the amount of stimulus current (long square current in pA) required to initiate a single action potential. This parameter gives us an indication of the excitability and the membrane resistance of the cell.
Ramp AP Time
This value is the time and voltage required to initiate a single action potential by a steady ramp of current injection (25 pA/sec). This value, while similar to Rheobase, was collected in a slightly different manner and in unbiased cluster analysis of cell-types was the best parameter to differentiate excitatory neurons.
The resting membrane potential was measured soon after breaking into the cell and measures the membrane potential where a neuron rests with no applied current.
Different sets of stimulation waveforms were used in order to:
- Interrogate intrinsic membrane mechanisms that underlie the input/output function of neurons
- Linear and non-linear subthreshold properties
- Action potential initiation and propagation
- Understand aspects of neural response properties in vivo
- Stimulation frequency dependence (theta vs. gamma) of spike initiation mechanisms
- Ion channel states due to different resting potentials in vivo
- Construct and test computational models of varying complexity emulating the neural response to stereotyped stimuli
- Generalized leaky-integrate-and-fire (GLIF) models
- Biophysically and morphologically realistic conductance-based compartmental models
The Allen Cell Types Database contains two types of neuronal models: perisomatic biophysical models and generalized leaky integrate-and-fire (GLIF) models. These models attempt to mathematically reproduce a cell's recorded response to a current injection. The perisomatic biophysical models take into account dendritic morphological structure, whereas GLIF models are simple point neuron models which represent the neuron as a single compartment.
There are five levels of GLIF models with increasing levels of complexity. The most basic model is a simple leaky integrate-and-fire equation. More advanced GLIFs attempt to model variable spike threshold, afterspike currents, and threshold adaptation.
1. Leaky Integrate and Fire (LIF)
Standard circuit representation of a resistor and capacitor in parallel with a leaky membrane.
2. LIF + Reset Rules (LIF-R)
LIF with biologically-derived threshold and voltage reset rules in addition to a biologically derived threshold decay.
3. LIF + Afterspike Currents (LIF-ASC)
LIF with spike-induced currents to model long-term effects of voltage-activated ion channels.
4. LIF-R + Afterspike Currents (LIF-R-ASC)
LIF with additional Reset Rules and Afterspike Currents.
5. LIF-R-ASC + Threshold Adaptation (LIF-R-ASC-A)
All of the above, with an additional voltage-dependent component of threshold.
Models with active conductances at the soma and passive dendritic morphology based on full 3D reconstruction.